Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study
نویسندگان
چکیده
Abstract Metal contacts form one of the main limitations for introduction 2D materials in next-generation scaled devices. Through ab-initio simulation techniques, we shed light on fundamental physics and screen several 3D top side contact metals. Our findings highlight that a low semiconducting-metal resistance can be achieved. By selecting an appropriate metal, demonstrate both ohmic or small Schottky barrier contacts. This leads to below 100 ??m good device drive performance with currents ON state up 1400 ?A/?m, i.e., reduced by mere 25% compared reference perfect contacts, provided sufficiently high doping concentration 1.8×10 13 cm ?2 is used. Additionally, show this achieved through electrostatic gate. Finally, perform screening possible 2D–3D Finding without has proven difficult, but it shown case intermediate interaction strength limited barrier, resistances
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ژورنال
عنوان ژورنال: npj 2D materials and applications
سال: 2023
ISSN: ['2397-7132']
DOI: https://doi.org/10.1038/s41699-023-00402-3